1 motorola smallsignal transistors, fets and diodes device data
npn silicon maximum ratings rating symbol value unit collector emitter voltage v ceo 50 vdc collector base voltage v cbo 50 vdc emitter base voltage v ebo 4.0 vdc collector current e continuous i c 50 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector emitter breakdown voltage (i c = 1.0 madc, i b = 0) v (br)ceo 50 e vdc collector base breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 50 e vdc collector cutoff current (v cb = 35 vdc, i e = 0) i cbo e 50 nadc emitter cutoff current (v eb = 3.0 vdc, i c = 0) i ebo e 50 nadc order this document by 2n5209/d
semiconductor technical data
case 2904, style 1 to92 (to226aa) 1 2 3 ? motorola, inc. 1996 collector 3 2 base 1 emitter
2 motorola smallsignal transistors, fets and diodes device data electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain (i c = 100 m adc, v ce = 5.0 vdc) 2n5209 2N5210 (i c = 1.0 madc, v ce = 5.0 vdc) 2n5209 2N5210 (i c = 10 madc, v ce = 5.0 vdc) (1) 2n5209 2N5210 h fe 100 200 150 250 150 250 300 600 e e e e e collector emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) v ce(sat) e 0.7 vdc base emitter on voltage (i c = 1.0 madc, v ce = 5.0 madc) v be(on) e 0.85 vdc small signal characteristics current gain e bandwidth product (i c = 500 m adc, v ce = 5.0 vdc, f = 20 mhz) f t 30 e mhz collectorbase capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c cb e 4.0 pf smallsignal current gain (i c = 1.0 madc, v ce = 5.0 vdc, f = 1.0 khz) 2n5209 2N5210 h fe 150 250 600 900 e noise figure (i c = 20 m adc, v ce = 5.0 vdc, r s = 22 k w , 2n5209 f = 1.0 khz) 2N5210 (i c = 20 m adc, v ce = 5.0 vdc, r s = 10 k w , 2n5209 f = 1.0 khz) 2N5210 nf e e e e 3.0 2.0 4.0 3.0 db 1. pulse test: pulse width = 300 s, duty cycle = 2.0%. r s i n e n ideal transistor figure 1. transistor noise model
3 motorola smallsignal transistors, fets and diodes device data figure 2. effects of frequency f, frequency (hz) 7.0 10 20 30 5.0 figure 3. effects of collector current i c , collector current (ma) figure 4. noise current f, frequency (hz) figure 5. wideband noise figure r s , source resistance (ohms) 3.0 10 noise characteristics (v ce = 5.0 vdc, t a = 25 c) noise voltage e n , noise vol tage (nv) e n , noise vol tage (nv) i n , noise current (pa) nf, noise figure (db) 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k bandwidth = 1.0 hz bandwidth = 1.0 hz bandwidth = 1.0 hz i c = 10 ma 300 m a 30 m a r s 0 3.0 ma 1.0 ma 7.0 10 20 30 5.0 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 r s 0 f = 10 hz 100 hz 1.0 khz 10 khz 100 khz i c = 10 ma 3.0 ma 1.0 ma 300 m a 100 m a 10 m a r s 0 10 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 0.1 0.2 0.3 1.0 0.7 2.0 3.0 5.0 7.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 0 4.0 8.0 12 16 20 bandwidth = 10 hz to 15.7 khz i c = 1.0 ma 500 m a 100 m a 10 m a 100 hz noise data 300 200 100 3.0 5.0 7.0 10 20 30 50 70 r s , source resistance (ohms) 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k v t , total noise vol tage (nv) nf, noise figure (db) 0 4.0 8.0 12 16 20 figure 6. total noise voltage bandwidth = 1.0 hz i c = 10 ma 3.0 ma 1.0 ma 300 m a 100 m a 30 m a 10 m a 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k i c = 10 ma 300 m a 100 m a 30 m a 3.0 ma 1.0 ma 10 m a bandwidth = 1.0 hz r s , source resistance (ohms) figure 7. noise figure 0.5
4 motorola smallsignal transistors, fets and diodes device data figure 8. dc current gain i c , collector current (ma) 0.4 1.0 2.0 3.0 4.0 0.3 0.01 h , dc current gain (normalized) 0.05 2.0 3.0 10 0.02 0.03 0.2 1.0 0.1 5.0 fe v ce = 5.0 v t a = 125 c 25 c 55 c 0.7 0.5 0.5 0.2 0.3 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 figure 9. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 10. temperature coefficients i c , collector current (ma) v, vol tage (vol ts) 0.01 0 0.8 1.2 1.6 2.4 t j = 25 c v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v t j = 25 c to 125 c 55 c to 25 c r vbe , baseemitter q temperature coefficient (mv/ c) 0.4 2.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f t , currentgain e bandwidth product (mhz) c, cap acitance (pf) 8.0 0.8 1.0 2.0 3.0 4.0 6.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t j = 25 c c cb c ob c eb c ib 1.0 2.0 5.0 3.0 7.0 10 20 30 50 70 100 500 300 200 70 50 100 v ce = 5.0 v t j = 25 c figure 11. capacitance v r , reverse voltage (volts) figure 12. currentgain e bandwidth product i c , collector current (ma)
5 motorola smallsignal transistors, fets and diodes device data package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f applies between p and l. dimension d and j apply between l and k minimum. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l f b k g h section xx c v d n n x x seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.022 0.41 0.55 f 0.016 0.019 0.41 0.48 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 12.70 l 0.250 6.35 n 0.080 0.105 2.04 2.66 p 0.100 2.54 r 0.115 2.93 v 0.135 3.43 1 style 1: pin 1. emitter 2. base 3. collector case 02904 (to226aa) issue ad
6 motorola smallsignal transistors, fets and diodes device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability , including without limitation consequential or incidental damages. at ypicalo parameters can and do vary in dif ferent applications. all operating parameters, including at ypicalso must be validated for each customer application by customer ' s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur . should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly , any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/af firmative action employer . how to reach us: usa/europe : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, toshikatsu otsuki, p.o. box 20912; phoenix, arizona 85036. 18004412447 6f seibubutsuryucenter, 3142 tatsumi kotoku, tokyo 135, japan. 0335218315 mfax : rmf ax0@email.sps.mot.com t ouchtone (602) 2446609 hong kong : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, internet : http://designnet.com 51 ting kok road, tai po, n.t., hong kong. 85226629298 2n5209/d ?
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